Samsung M391A1K43BB1-CRC memory module 8 GB 1 x 8 GB DDR4 2400 MHz ECC - Memory - Servers & accessories - IT equipment - MT Shop
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  • Samsung M391A1K43BB1-CRC memory module 8 GB 1 x 8 GB DDR4 2400 MHz ECC
  • Samsung M391A1K43BB1-CRC memory module 8 GB 1 x 8 GB DDR4 2400 MHz ECC
  • Samsung M391A1K43BB1-CRC memory module 8 GB 1 x 8 GB DDR4 2400 MHz ECC
  • Samsung M391A1K43BB1-CRC memory module 8 GB 1 x 8 GB DDR4 2400 MHz ECC
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Samsung M391A1K43BB1-CRC memory module 8 GB 1 x 8 GB DDR4 2400 MHz ECC

Manufacturer: Samsung Product Code: 16461210 EAN: 05706998330567 MPN: M391A1K43BB1-CRC
Samsung M391A1K43BB1-CRC, 8 GB, 1 x 8 GB, DDR4, 2400 MHz, 288-pin DIMM
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Product Information


Information
Manufacturer Samsung
Product code 16461210
EAN 05706998330567
Manufacturer part number M391A1K43BB1-CRC
Category Memory
Memory
Internal memory 8 GB
Internal memory type DDR4
Memory clock speed 2400 MHz
Memory form factor 288-pin DIMM
ECC Y
Features
Memory layout (modules x size) 1 x 8 GB
Buffered memory type Unregistered (unbuffered)
CAS latency 17
Memory ranking 1
Module configuration 1024M x 72
Design
Component for PC/Server
Operational conditions
Operating temperature (T-T) 0 - 85 °C
Weight & dimensions
Height 31.2 mm

Product Description


Samsung DDR4 Unbuffered DIMMs (or UDIMMs) are the most common type of memory used on desktop systems. A UDIMM memory module does not contain any buffer or additional hardware register between the memory module and the system’s memory controller. UDIMMs also consume much lower power, and have much lower data access latencies than buffered or registered memory. Thus, UDIMMs are an excellent solution for low-cost computing, such as home/personal computing.

In addition to Unbuffered DIMM’s features, DDR4 memory is available as Unbuffered DIMM. Samsung DDR4 SDRAM is the new generation of high-performance, power-efficient memory. As the semiconductor memory is widely used in current generation computers, DDR4 is considered the industry standard commercial version of DRAM memory. Advancements in semiconductor design, development, and fabrication processes have enabled the development of high-performance DRAM memory, making the design of devices and applications, such as ultra-thin notebook computers, possible. Progressive developments in DRAM memory have resulted in newer versions operating at lower voltages, resulting in increasing levels of power savings. By leveraging the full potential of Samsung DDR4, you can increase computing performance, while consuming less energy.

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